rbv800 - rbv810 silicon bridge rectifiers prv : 50 - 1000 volts io : 8.0 amperes features : * high current capability * high surge current capability * high reliability * low reverse current * low forward voltage drop * high case dielectric strength of 2000 v dc * ideal for printed circuit board * very good heat dissipation * pb / rohs free mechanical data : * case : reliable low cost construction utilizing molded plastic technique * epoxy : ul94v-o rate flame retardant * terminals : plated lead solderable per mil-std-202, method 208 guaranteed * polarity : polarity symbols marked on case * mounting position : any * weight : 7.97 grams ( approximaly ) maximum ratings and electrical characteristics rating at 25 c ambient temperature unless otherwise specified . single phase, half wave, 60 hz, resistive or inductive load. for capacitive load, derate current by 20%. symbol rbv 800 rbv 801 rbv 802 rbv 804 rbv 806 rbv 808 rbv 810 unit maximum recurrent peak reverse voltage v rrm 50 100 200 400 600 800 1000 v maximum rms voltage v rms 35 70 140 280 420 560 700 v maximum dc blocking voltage v dc 50 100 200 400 600 800 1000 v maximum average forward current tc = 55 c i f(av) 8.0 a peak forward surge current single half sine wave superimposed on rated load (jedec method) i fsm 300 a current squared time at t < 8.3 ms. i 2 t 160 a 2 s maximum forward voltage per diode at if = 4.0 a v f 1.0 v maximum dc reverse current ta = 25 c i r 10 m a at rated dc blocking voltage ta = 100 c i r(h) 200 m a typical thermal resistance (note 1) r q jc 2.5 c/w operating junction temperature range t j - 40 to + 150 c storage temperature range t stg - 40 to + 150 c notes : 1. thermal resistance from junction to case with units mounted on a 3.2"x3.2"x0.12" thk (8.2cm.x8.2cm.x0.3cm.) al. plate. heatsink. page 1 of 2 rev. 03 : september 9, 2005 rating rbv25 dimensions in millimeters c3 4.9 0. 2 3.9 0. 2 ~ ? 3.2 0.1 ~ 11 0.2 17.5 0.5 20 0 . 3 0.7 0.1 1.0 0.1 2.0 0.2 30 0.3 7.5 0.2 10 0.2 + 7.5 0.2 13.5 0.3
rating and characteristic curves ( rbv800 - rbv810 ) fig.1 - derating curve for output fig.2 - maximum non-repetitive peak rectified current forward surge current 0 25 50 75 100 125 150 175 case temperature, ( c) number of cycles at 60hz fig.3 - typical forward characteristics fig.4 - typical reverse characteristics per diode per diode forward voltage, volts page 2 of 2 rev. 03 : september 9, 2005 tc = 50 c heat-sink mounting, 3.2" x 3.2" x 0.12" thk. (8.2cm x 8.2cm x 0.3cm) al.- plate 8 6 4 2 12 100 10 1.0 200 0 300 0 150 100 50 0.1 10 80 0.01 0.01 1.0 0.1 100 140 0 20 40 60 12 0 percent of rated reverse voltage, (%) peak forward surge current, amperes average forward output current amperes forward current, amperes reverse current, microamperes t j = 25 c pulse width = 300 m s 1 % duty cycle 8.3 ms single half sine wave jedec method t j = 50 c t j = 100 c t j = 25 c 10 250 10 20 60 1 2 4 6 40 100 1.4 1.6 0.4 0.6 0.8 1.0 1.2 1.8
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